View AGR19030EF_7832559.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

preliminary data sheet june 2004 AGR19030EF 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor introduction the AGR19030EF is a 30 w, 28 v n-channel later- ally diffused metal oxide semiconductor (ldmos) rf power field effect transistor (fet) suitable for per- sonal communication service (pcs) (1930 mhz? 1990 mhz), global system for mobile communication (gsm/edge), time division multiple access (tdma), and single-carrier or multicarrier class ab power amplifier applications. figure 1. AGR19030EF (flanged) package n-cdma features typical 2 carrier n-cdma performance: v dd = 28 v, i dq = 350 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz, is-95 cdma (pilot, sync, paging, traffic codes 8?13). peak/average (p/a) = 9.72 db at 0.01% probability on ccdf. 1.2288 mhz trans- mission bandwidth (bw). adjacent channel power ratio (acpr) measured over 30 khz bw at f1 ? 885 khz and f2 + 885 khz. third-order intermodu- lation distortion (im3) measured over a 1.2288 mhz bw at f1 ? 2.5 mhz and f2 + 2.5 mhz. ? output power (p out ): 6 w. ? power gain: 16 db. ? efficiency: 24.8%. ? im3: ?34.5 dbc. ? acpr: ?49 dbc. edge features typical edge performance, 1960 mhz, 26 v, i dq = 250 ma: ? output power (p out ): 12 w typical. ? power gain: 15.5 db. ? efficiency: 38% typical. ? modulation spectrum: ? @ 400 khz = ?61 dbc. ? @ 600 khz = ?74 dbc. ? error vector magnitude (evm) = 2.2% gsm features typical performance over entire gsm band: ? p1db: 30 w typical. ? continuous wave (cw) power gain: @ p1db = 15 db. ? cw efficiency @ p1db = 55% typical. ? return loss: ?12 db. device performance features high-reliability, gold-metalization process. low hot carrier injection (hci) induced bias drift over 20 years. internally matched. high gain, efficiency, and linearity. integrated esd protection. device can withstand 10:1 voltage standing wave ratio (vswr) at 28 vdc, 1930 mhz, 30 w cw output power. large signal impedance parameters available. esd rating * * although electrostatic discharge (esd) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to esd and electrical overstress (eos) during all handling, assembly, and test operations. agere employs a human-body model (hbm), a machine model (mm), and a charged-device model (cdm) qualification requirement in order to determine esd-suscept ibility limits and protection design evaluation. esd voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by jedec's jesd22-a114b (hbm), jesd22-a115a (mm), and jesd22-c101a (cdm) standards. caution: mos devices are susceptible to damage from elec- trostatic charge. reasonable precautions in han- dling and packaging mos devices should be observed. AGR19030EF minimum (v) class hbm 500 1b mm 50 a cdm 1500 4
2 agere systems inc. 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19030EF preliminary data sheet electrical characteristics table 1. thermal characteristics table 2. absolute maximum ratings * * stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. t hese are absolute stress ratings only. functional operation of the device is not imp lied at these or any other conditions in excess of those given in the operational sections of the data sheet. exposure to absolute maximum ratings for exte nded periods can adversely affect device reliability. recommended operating conditions apply unless otherwise specified: t c = 30 c. table 3. dc characteristics parameter symbol value unit thermal resistance, junction to case r jc 2.0 c/w parameter symbol value unit drain-source voltage v dss 65 vdc gate-source voltage v gs ?0.5, 15 vdc total dissipation at t c = 25 c p d 87.5 w derate above 25 c?0.5w/c operating junction temperature t j 200 c storage temperature range t stg ?65, 150 c parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs =0v, i d =38a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs =5v, v ds =0v) i gss ??1adc zero gate voltage drain leakage current (v ds =28v, v gs =0v) i dss ??3adc on characteristics forward transconductance (v ds =10v, i d =0.4a) g fs ?2.4? s gate threshold voltage (v ds =10v, i d =100a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds =28v, i d = 300 ma) v gs(q) ?3.8? vdc drain-source on-voltage (v gs =10v, i d =0.4a) v ds(on) ?0.3? vdc
agere systems inc. 3 preliminary data sheet AGR19030EF june 2004 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor electrical characteristics (continued) recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. rf characteristics parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs =0, f=1.0mhz) (this part is internally matched on both the input and output.) c rss ?0.8?pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 15.5 16 ? db drain efficiency (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz) ? 24.8 ? % third-order intermodulation distortion (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured in a 1.2288 integration bw centered at f1 ? 2.5 mhz and f2 + 2.5 mhz, referenced to the carrier channel power) im3 ? ?34.5 ? dbc adjacent channel power ratio (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured in a 1.2288 integration bw centered at f1 ? 2.5 mhz and f2 + 2.5 mhz, referenced to the carrier channel power) acpr ? ?49.0 ? dbc output power at 1 db gain compression (v dd =28v, p out = 30 w cw, f = 1990 mhz, i dq =350ma) p1db 30 35 ? w input return loss (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz) irl ? ?12 ? db ruggedness (v dd =28v, p out =30w cw, i dq = 350 ma, f = 1930 mhz, vswr = 10:1 [all phase angles]) no degradation in output power.
4 agere systems inc. 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19030EF preliminary data sheet test circuit illustrations for AGR19030EF a. schematic b. component layout parts list: microstrip line: z1, 0.315 in. x 0.067 in.; z2, 0.195 in. x 0.067 in.; z3, 0.345 in. x 0.067 in.; z4, 0.230 in. x 0.260 in.; z5, 0.200 in. x 0.1 60 in.; z6, 0.395 in. x 0.675 in.; z7, 0.355 in. x 0.640 in.; z8, 0.645 in. x 0.130 in.; z9, 0.145 in. x 0.067 in.; z10, 0.535 in. x 0. 067 in; z11, 0.345 in. x 0.030 in; z12, 0.275 in. x 0.050 in. atc ? b case chip capacitors: c5, c22: 8.2 pf 100b8r2j ca500x; c6, c20: 10 pf 100b100jca 500x; c12: 100 pf 102b100jca500x; c13: 1000 pf 103b100jca500x. kemet ? b case chip capacitors: c2, c16: 0.10 f cdr33vx1 04akws; tantalum capacitor: c17: 1 f 50 v t491c. vitramon ? 1206: c4, c14: 22000 f. sprague ? tantalum smt (35 v): c1, c19, c23: 22 f; c18: 10 f. murata ? 0805: c3, c15: 0.01 f, grm40x7r103k100al. johanson giga-trim ? variable capacitors: c7, 0.4 pf?2.5 pf. fair-rite ? ferrite bead: fb1: 2743019447. fixed film chip resistor: r1: 12 , 0.25 w, 0.08 x 0.13. pcb etched circuit boards taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. figure 2. AGR19030EF test circuit dut r1 c3 z11 c6 z2 z1 c20 z7 z8 z10 rf input v gg v dd rf output z4 z3 fb1 z12 c4 c5 c16 3 1 2 pins: 1. drain, 2. gate, 3. source c23 c13 c15 c14 c1 c2 c12 z5 c7 c19 c18 c17 z9 + c22 +++ z6 231
agere systems inc. 5 preliminary data sheet AGR19030EF june 2004 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics note: z l was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. figure 3. series equivalent input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 1930 (f1) 4.49 ? j6.43 10.00 ? j6.30 1960 (f2) 4.06 ? j5.98 9.65 ? j6.25 1990 (f3) 3.78 ? j5.61 9.44 ? j6.33 0 .1 0 .1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0 .7 0.7 0 .8 0.8 0 .9 0.9 1.0 1.0 1 .2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 1 0 1 0 10 20 20 20 50 50 50 0.2 0 .2 0 .2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0 .8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -8 5 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0 .0 4 0.05 0 .0 6 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0 .1 7 0 .18 0 .1 9 0.2 0 .2 1 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0 .2 8 0 .2 9 0.3 0 .3 1 0.3 2 0.3 3 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0 .42 0.4 3 0 .4 4 0.45 0 .4 6 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z l f3 f1 z s f3 f1 z 0 = 20 ? dut z s z l input match output match drain (1) source (3) gate (2)
6 agere systems inc. 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19030EF preliminary data sheet typical performance characteristics (continued) test conditions: v dd = 28 vdc, i dq = 350 ma, pulsed cw, 4 s (on), 40 s (off), center frequency = 1960 mhz. figure 4. cw p out vs. p in test conditions: v dd = 28 vdc, i dq = 350 ma, f = 1960 mhz, n-cdma, 2.5 mhz @ 1.2288 mhz bw, p/a = 9.72 db @ 0.01% probability (ccdf), channel spac- ing (bw) 885 khz (30 khz), 1.25 mhz (12.5 khz), 2.25 mhz (1 mhz). figure 5. n-cdma acpr, power gain, and drain efficiency vs. p out 25 30 35 40 45 50 10 15 20 25 30 35 p in (dbm) ? p out (dbm) z 7 8 9 10 11 12 13 14 15 16 17 g ps (db) z p1db = 45.74 dbm (37.50 w) p3db = 46.59 dbm (45.60 w) p out g ps 0 5 10 15 20 25 30 35 40 45 50 25 30 35 40 45 p out (dbm) avg. z g ps (db), (%) z -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 acpr (dbc) z g ps 885 khz 2.25 mhz 1.25 mhz
agere systems inc. 7 preliminary data sheet AGR19030EF june 2004 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics (continued) test conditions: v dd = 28 vdc, i dq = 350 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2 x n-cdma, 2.5 mhz @ 1.2288 mhz bw, p/a = 9.72 db @ 0.01% proba- bility (ccdf), channel spacing (bw) acpr: 885 khz (30 khz), im3: 2.5 mhz (1.2288 mhz). figure 6. 2-carrier n-cdma acpr, im3 po wer gain, and drain efficiency vs. p out test conditions: v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2 carrier n-cdma measurement. figure 7. 2-carrier n-cdma power gain vs. p out 0 5 10 15 20 25 30 35 40 45 50 55 60 30 35 40 45 p out (w) z g ps (db), (%) z -70 -60 -50 -40 -30 -20 -10 im3 (dbc), acpr (dbc) z acp g ps im3 13 14 15 16 17 18 25 30 35 40 4 5 p out (dbm) z g ps (db) z i dq = 250 ma i dq = 450 ma i dq = 400 ma i dq = 350 ma i dq = 300 ma
8 agere systems inc. 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19030EF preliminary data sheet typical performance characteristics (continued) test conditions: v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2 carrier n-cdma measurement. figure 8. acpr vs. p out test conditions: v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz, 2 carrier n-cdma measurement. figure 9. im3 vs. p out -70 -65 -60 -55 -50 -45 -40 -35 -30 30 35 40 4 5 p out (dbm) z acpr (dbc) z idq = 250 ma idq = 400 ma idq = 450 ma idq = 350 ma idq = 300 ma -55 -50 -45 -40 -35 -30 -25 -20 -15 30 35 40 4 5 p out (dbm) z im3 (dbc) z idq = 250 ma idq = 450 ma idq = 400 ma idq = 350 ma idq = 300 ma
agere systems inc. 9 preliminary data sheet AGR19030EF june 2004 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor typical performance characteristics (continued) test conditions: v dd = 26 vdc, i dq = 250 ma, f = 1960 mhz, modulation = gsm/edge. figure 10. gsm/edge power gain, drain efficiency, spectral regrowth, and evm vs. p out test conditions: v dd = 28 vdc, i dq = 250 ma, f = 1960 mhz, modulation = gsm/edge. figure 11. gsm/edge power gain, drain efficiency, spectral regrowth, and evm vs. p out 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 p out (w) avg. z g ps (db), (%), evm (%) z -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 spectral regrowth (dbc) z evm g ps 600 khz 400 khz 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 p out (w) avg. z g ps (db), (%), evm (%) z -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 spectral regrowth (dbc) z evm g ps 600 khz 400 khz
10 agere systems inc. 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor june 2004 AGR19030EF preliminary data sheet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR19030EF label notes: m before the part number denotes m odel program. x before the part number denotes engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of m anufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. pins: 1. drain 2. gate 3. source 1 2 3 agere agr18030f yywwll zzzzzzz agere agr19030xf yywwll xxxxx zzzzzzz 3 1 2
preliminary data sheet AGR19030EF june 2004 30 w, 1930 mhz?1990 mhz, pcs ldmos rf power transistor atc is a registered trademark of american technical ceramics corp. kemet is a registered trademark of krc trade corporation. vitramon is a registered trademark of vitramon incorporated. sprague is a registered trademark of spr ague electric company corporation. murata is a registered trademark of murata electronics north america, inc. johanson and giga-trim are registered trademarks of johanson manufacturing corporation. fair-rite is a registered trademark of fair-rite products corporation. taconic is a registered trademark of tonoga limited dba taconic plastics ltd. agere systems inc. reserves the right to make changes to the pr oduct(s) or information contained herein without notice. no liab ility is assumed as a result of their use or application. agere is a registered trademark of agere systems inc. agere s ystems and the agere logo are trademarks of agere systems inc. copyright ? 2004 agere systems inc. all rights reserved 2004 ds04-224rfpp (replaces ds04-158rfpp) for additional information, contact your agere systems account manager or the following: internet: http://www.agere.com e-mail: docmaster@agere.com n. america: agere systems inc., lehigh valley central campus, room 10a-301c, 1110 american parkway ne, allentown, pa 18109-9138 1-800-372-2447 , fax 610-712-4106 (in canada: 1-800-553-2448 , fax 610-712-4106) asia: china: (86) 21-54614688 (shanghai), (86) 755-25881122 (shenzhen) japan: (81) 3-5421-1600 (tokyo), korea: (82) 2-767-1850 (seoul), singapore: (65) 6778-8833 , taiwan: (886) 2-2725-5858 (taipei) europe: tel. (44) 1344 296 400 rf power product information for product and application information, please visit our website: http://www.agere.com/rfpower .

▲Up To Search▲

Price & Availability of AGR19030EF

	To Download AGR19030EF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .